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| .040" NPN Phototransistors Epoxy Lensed TO-106 Ceramic Package VTT9102, 9103 PACKAGE DIMENSIONS inch (mm) CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a lens of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -20C to 70C -20C to 70C 100 mW 2.5 mW/C 50 mA 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT9102 VTT9103 6.0 13.0 Max. -- -- H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 5 5 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 4.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 6.0 10.0 Typ. 42 42 Angular Response 1/2 Part Number Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 101 |
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